WBG materials, such as silicon carbide (SiC) and gallium nitride ... for thermal cycling and stress on devices and packaging.” Managing thermal stress is especially challenging in heterogeneous ...

Infineon Technologies AG announces its 200 mm silicon carbide (SiC) manufacturing capability, with initial product releases ...

Market opportunity drives expansion Wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are gaining significant traction due to their advantages over traditional ...

Infineon Technologies has announced significant progress along its 200 mm SiC roadmap, with customers receiving the first ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced the adoption of both technologies into Dell’s ...

NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s ...

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

Navitas Semiconductor has announced the integration of its GaNFast gallium nitride and GeneSiC silicon carbide technologies into Dell's notebook adapters, ranging from 60 W to 360 W. These ...

NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s family ...

Infineon’s production sites in Villach and Kulim share technologies and processes which allow for fast ramping and smooth and highly efficient operations in SiC and gallium nitride (GaN) manufacturing ...

“SiC and GaN are revolutionizing power electronics, particularly in high-performance applications where efficiency and thermal management are crucial. Unlike traditional silicon (Si ...