Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...
Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nCMALVERN, Pa., Jan. 29 ...
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
The devices consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer ...
Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer ...
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