Introducing a foundry service for 70 nm GaAs pHEMTs supports the production of power amplifiers operating at frequencies up to hundreds of gigahertz.

Utilizing metal-organic chemical vapor deposition (MOCVD), the researchers fabricated a 1 mm2 front-contacted GaAs PV device based on a Ge substrate, the weak Ge layer, an epitaxial Ge layer ...

Solar cells manufactured from GaAs and gallium indium phosphide (GaInP ... and then samples were inverted onto a Si handle, and the substrate was etched away followed by the etch stop,” they ...