SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

The tungsten metal gate device provides a significantly improved Ion/Ioff ratio with a notable 98.18% decrease in the off-current and 22.5% increase in the ON current, in contrast to existing ...

Introducing a HfO 2 gate dielectric by atomic layer deposition trims leakage ... “Compared to SiC MOSFETs with an SiO 2 insulator, our HfO 2-gated MOSFET has a factor of five increase in permittivity.

The 1.8V GPIO 3VT library provides general purpose bidirectional I/O cells that are both fault tolerant and 3.3V tolerant. These programmable, multi-voltage I/O’s give the system designer the ...

Our I/O solutions include 1.8V & 3.3V GPIO, I2C, ... Certus is pleased to offer High-voltage ESD solutions across multiple baseline technologies. Distinguishing Certus is our ability to provide ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...

After hours: February 13 at 4:01:37 PM EST ...

Connecting decision makers to a dynamic network of information, people and ideas, Bloomberg quickly and accurately delivers business and financial information, news and insight around the world ...