Yahoo Finance1d
Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT ...
EDN5d
Vishay expands SiC Schottky diode portfolio
Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...
Electronics Weekly3h
Driving a GaN half-bridge? You might want to know this
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...
eeworldonline8d
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Compoundsemiconductor.net13d
Vishay launches new high voltage SiC diodes
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
Nasdaq14d
Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer ...
manilatimes13d
Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, ...