Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

Market Overview The Vietnam GaN Power Devices Market was valued at USD 7.56 million in 2023 and is projected to reach USD 34.99 million by 2029, growing at a robust CAGR of 28.90% during the forecast ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

S'pore has opportunities in an increasingly trade hostile world: Ministers, experts at CNBC Converge Live Read more at ...

US embassy in Singapore characterised US-Singapore economic relations as enduring and dynamic. Read more at straitstimes.com.

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

The iGaN Laboratory led by Haiding Sun at the University of Science and Technology of China (USTC) has proposed a novel ...

ROHM has reported that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions. Integrating ROHM's GaN HEMTs, which combine ...

HRL Laboratories plans to surpass heat transfer metrics set out by the Defense Advanced Research Project Agency (DARPA) with ...