Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

When light interacts with metallic nanostructures, it instantaneously generates plasmonic hot carriers, which serve as key ...

Market Overview The Vietnam GaN Power Devices Market was valued at USD 7.56 million in 2023 and is projected to reach USD 34.99 million by 2029, growing at a robust CAGR of 28.90% during the forecast ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

S'pore has opportunities in an increasingly trade hostile world: Ministers, experts at CNBC Converge Live Read more at ...

Reuters reported that President Trump’s tariffs have impacted the broader stock markets, weighing on investors’ sentiments, ...

US embassy in Singapore characterised US-Singapore economic relations as enduring and dynamic. Read more at straitstimes.com.