SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

The tungsten metal gate device provides a significantly improved Ion/Ioff ratio with a notable 98.18% decrease in the off-current and 22.5% increase in the ON current, in contrast to existing ...

Introducing a HfO 2 gate dielectric by atomic layer deposition trims leakage ... “Compared to SiC MOSFETs with an SiO 2 insulator, our HfO 2-gated MOSFET has a factor of five increase in permittivity.

The 1.8V GPIO 3VT library provides general purpose bidirectional I/O cells that are both fault tolerant and 3.3V tolerant. These programmable, multi-voltage I/O’s give the system designer the ...

Abstract: This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric ...

UMC 0.18um GII Logic process 2.5/3.3V SSTL2 ClassI/LVTTL combo IO with POC (Pad On Circuit). UMC 0.18um GII Logic process 2.5V/3.3V SSTL2 Class II/LVTTL combo IO with POC (Pad On Circuit).

Fibonacci levels suggested the next resistance level may be near $1.335, where sellers may test the rally Improving market health across the board could possibly facilitate an uptick for FET Fetch.AI ...

At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the performance of diamond, coating it in hydrogen atoms followed by layers of ...

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