SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...
A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...
The TSC family has been designed to help customers achieve excellent robustness with maximum power density and system efficiency at low cost. It also enables direct heat dissipation of 95 percent, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback