and wideband gap 4H-silicon carbide (4H-SiC) single crystal semiconductors. These devices include a novel lateral normally-off Ga2O3 power transistor, a solar-blind UV photodetector and a 4H-SiC ...
Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300∘ C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
This article presents models for the prepulse amplitude, pulse front durations, and pulse peak based on the operating mechanism of 4H-SiC DSRD. The models establish the connection between the output ...
Departamento de Química, Módulo 13, Universidad Autónoma de Madrid, Madrid 28049, Spain ...
Universite Claude Bernard Lyon 1, CNRS, LMI UMR 5615, Villeurbanne F-69100, France ...
Compound Semiconductorâ„¢ is an Angel Business Communications publication.
GlobalWafers chairperson Doris Hsu reports that prices for mainstream 6-inch silicon carbide (SiC) substrates have stabilized, though a market rebound remains uncertain. She noted that Taiwanese ...
CDIL Semiconductors and Infineon Technologies have signed a Memorandum of Understanding (MoU) to collaborate on power semiconductor solutions tailored to India's growing needs in e-mobility ...
The store, one of four in Minnesota, has seemingly pulled the plug on its shop in Rochester's Miracle Mile Shopping Center.
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