Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

This involves exploring various substrate technologies, including Fully Depleted Silicon-on-Insulator (FD-SOI) and high-resistivity substrates, which are designed to minimize losses and improve ...

The actual creation of silicon oxide starts at about the 7:45 ... The solution was simple — more heat and better insulation — and he was able to reliably build oxide layers in the 350 to ...

Researchers at Osaka University in Suita, Japan, have devised a novel way to improve the performance of electronic devices. The study, published in ACS Applied Electronic ...

The work by researchers in the Center for Advanced Semiconductor Technologies could lead to energy-efficient microelectronics ...

Like carbon, silicon has four electrons in its outermost ... MOSFETs have a metal gate electrode atop an oxide insulator, which is itself affixed to a slice of semiconductor material.