Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer ...
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer ...
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