Researchers at the US Department of Energy's National Renewable Energy Laboratory have fabricated a III-V gallium arsenide (GaAs) solar cell based on a substrate made of spalled GaAs. The cost of ...

Introducing a foundry service for 70 nm GaAs pHEMTs supports the production of power amplifiers operating at frequencies up to hundreds of gigahertz.

Until recently, the deposition of such compound semiconductors onto a plastic substrate was thought to ... LEDs based on conventional GaAs–InGaP semiconductors on a thin sacrificial layer ...